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| Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit: mm 6.90.1 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 s Features q q q 0.7 4.0 0.65 max. 1.0 1.0 High transition frequency fT. Large collector power dissipation PC. Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 50 45 4 50 1 150 -55 ~ +150 Unit 0.45-0.05 0.45-0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO IC PC* Tj Tstg 2.50.5 1 2 2.50.5 3 V V mA W C C Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.20.1 0.65 max. 0.45+0.1 - 0.05 2.50.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cre PG Conditions VCB = 20V, IE = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 10A IC = 20mA, IB = 2mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = -1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 58MHz 22 300 1.5 30 50 45 4 20 100 0.4 V MHz pF dB min typ max 100 Unit nA V V V 14.50.5 1 Transistor PC -- Ta 1.2 80 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 70 2SC4502 IC -- VCE 60 25C IB=2.0mA 1.8mA 1.6mA 50 40 30 20 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 50 Ta=100C 40 -25C VCE=10V IC -- VBE Collector power dissipation PC (W) 1.0 Collector current IC (mA) 60 0.8 0.6 Collector current IC (mA) 30 0.4 20 0.2 10 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 25C 0.03 0.01 0.1 Ta=100C -25C IC/IB=10 100 hFE -- IC 600 VCE=10V VCB=10V Ta=25C fT -- I E Forward current transfer ratio hFE Transition frequency fT (MHz) 30 100 80 500 400 60 300 40 Ta=100C 25C -25C 200 20 100 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) -2.4 IC=1mA f=10.7MHz Ta=25C 30 PG -- IE VCB=10V f=58MHz Ta=25C 3.0 2.5 -2.0 25 2.0 -1.6 Power gain PG (dB) 1 3 10 30 100 20 1.5 -1.2 15 1.0 - 0.8 10 0.5 - 0.4 5 0 1 3 10 30 100 0 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA) 2 |
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